Mostafa Emam, PhD

Mostafa Emam (IEEE M’10, IEEE SM’16) received the B.Sc. degree in electronics and communication engineering from Ain Shams University, Cairo, Egypt, in 2001, the Diplôme d’Ingénieur degree in electronics and signal processing, and the M.Sc. degree in design of microelectronics circuits and systems, both from the Institute National Polytechnique (INP), Toulouse, France, in 2005. He received the Ph.D. degree in engineering sciences in the Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Electrical Engineering, Université catholique de Louvain (UCL), Louvain- la-Neuve, Belgium, in 2010. From 2006 to 2010, he was a researcher at UCL where he worked on wideband characterization and modeling of MOSFETs.

His research interests include the characterization and modeling of SOI devices in dc, RF, large-signal, and high- frequency noise, for harsh-environment applications and under mechanical-stress conditions as well as the design and simulation of RF SOI circuits.

Dr Emam is IEEE Senior member, the author and co-author of more than 40 scientific articles and book chapters, a reviewer for several IEEE journals. From 2015 till 2018 he served as the technical chair (SubVt track) and in 2019 as the general chair of the IEEE International S3S Conference.

Since 2011, he is the founder of Incize, a spin-off from UCL, providing an innovative characterization and modeling service for devices and materials in all fields of operation.

Gilles Scheen, PhD

Gilles Scheen received the MSc degree in physicist-Engineering (opto-electronics orientation) from Université de Liège (Belgium). In 2015 he received his PhD in microtechnology from the UClouvain, Belgium. His PhD focused on post-process integration of porous silicon for sensing applications. During this time he published papers in different scientific journals and participated to numerous conferences.

His research interests include the porous silicon integration for various applications with a focus on RF microelectronic, innovative techniques for (porous) semiconductor characterization.

In September 2019, he joined Incize as senior engineer.

Christophe Pavageau, PhD

Christophe Pavageau received the Diplôme d’Ingénieur degree from Ecole Supérieure d’Electronique de l’Ouest (ESEO), Angers, France in 2002 and the Ph.D. degree in microelectronics from Lille University, France, in 2005. From 2002 to 2005, he worked on the assessment of CMOS SOI technologies for mmWave communications for the French-based research centers of IEMN, Lille and CEA, Paris.

In November 2005, he joined IMEC, Leuven, Belgium, where he was designing RF and mmWave IC on advanced CMOS fabrication processes, in particular for 60GHz phased-array communications. In 2008, he joined DelfMEMS, Lille, a French-based technology company developing RF MEMS switches where he has held the positions of RF principal engineer and design team manager. In 2017, he joined Stormshield, Lille, a European network security provider, as Product Regulatory Compliance and Quality Manager.

Dr Christophe Pavageau has two patents and authored scientific papers in peer-reviewed journals, international conferences and workshops.

In June 2022, he joined Incize as a senior engineer.

Fiona Bellin, MSc

Fiona Bellin first received a Bachelor’s degree in Psychology at the University of Caen (France) in 2017 and decided to continue with a Master’s degree as a distance-learning program in Occupational Psychology with the University of Leicester (UK). She graduated with a MSc in Occupational Psychology in 2020. 
 
Her interests are the well-being of the team, the assistance with management of the business and the team, and the administration office work to support the CEO. 
 
In August 2021, Fiona Bellin joined Incize as a full-time Executive Assistant.

Marianne Renoz, MSc

Marianne Renoz received her first Master’s degree in English-Chinese-French Translation from the University of Louvain (UCL) in 2013, followed by a one-year programme in Mandarin (advanced) at the Shanghai International Studies University.

She then pursued her education and received her second Master’s degree in East Asian Business from the University of Sheffield, UK, in 2015, and a Diploma in Management from the Ichec Brussels Management School in 2016.

In January 2017, following her studies, Marianne Renoz first joined Incize as an intern in Business Development and accomplished an exploratory mission to prospect East Asian markets. Following the internship, she worked for Huawei Technologies for over three years. At the same time, she undertook a distance learning programme in Telecommunication Technologies and Business.

In July 2021, Marianne Renoz re-joined Incize as a full-time International Business Developer.

Benjamin Huet, PhD

Benjamin Huet received his M.Sc. degree in Material Science and Engineering from the Université catholique de Louvain (UCL) in 2013. He pursued a Ph.D. in the department of electrical engineering of UCL from 2013 to 2017. His Ph.D. research focused on the synthesis, transfer and integration of graphene, a two-dimensional (2D) conducting material. He stayed for another 8 months at UCL as a post-doctoral researcher to develop tools to produce hexagonal boron nitride (h-BN), a 2D insulating material which shows great promises for next generation (opto)electronics. 

In 2018, he joined the Applied Research Laboratory (ARL) at the Pennsylvania State University (PSU) to gain more expertise in the production and processing of graphene and h-BN. In 2019, he joined the Materials Research Institute (MRI) at PSU to carry out another post-doctoral program where he was involved in the production of 2D transition metal dichalcogenides (2D semiconductors) and developed a tool to perform Raman spectroscopy and photoluminescence under a controlled atmosphere. In May 2020, he was promoted Assistant Research Professor at PSU. He published multiple papers in peer-reviewed international journals and presented his research in >10 international conferences.

His research interests include the production and characterization of novel materials in order to facilitate their integration in future electronic technologies. 

In April 2021, he came back to Belgium to join Incize as a R&D Process Engineer.

Yifei Yang, MSc

Yifei Yang received her first Master degree in Teaching Chinese to Speakers of Other Languages at Yunnan University in China in 2015. From 2015 to 2017, she worked in a cosmetics company as the general manager’s assistant in Kunming, China. In 2017, she went to France to pursue her second Master degree, majoring in European Integration and Global Studies at Centre International de Formation Européenne (CIFE) in Nice. After graduating, she worked at a start-up education company as a Marketing Manager in Changzhou, China, for a year. In January 2020, Yifei went to Paris to improve her knowledge of French at Alliance Française.

In April 2020, Yifei Yang joined Incize as business developer for Asia Pacific.

Ferran Ureña i Begara, PhD

Ferran Ureña i Begara received the degree of Technical Engineering in Industrial Electronics from the Escola Universitària d’Enginyeria Tècnica Industrial de Barcelona, Universitat Politècnica de Catalunya, Barcelona, Spain, 1992. From 1993 till 2007, he joined the Institut Pere Barnils de Centelles, Barcelona, Spain, where he taught computing and electronics technology and he was also the manager of the computers and network system. In 2008 he received the M.Sc. degree in Microelectronics from the School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne, UK, and the M.Sc. degree in Micro and Nanoelectronics from the Escola Tècnica Superior d’Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, Spain, 2009. He obtained his Ph.D. degree in 2013 from the School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne, UK.  During his Ph.D. he worked on the modelling and characterization of strain in silicon nanostructures by Raman spectroscopy and Atomic Force Microscopy (AFM).

In 2013, Dr. Ureña joined as a post-doc at the Institute of Information and Communication Technologies, Electronics and Applied Mathematics at the Université catholique de Louvain, Louvain-la-Neuve, Belgium where he was involved in the fabrication, analysis and characterization of phase transition materials and 2D materials by Raman spectroscopy, Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS).

His research interests include the modelling and characterization of intrinsic material properties at the micro and nanoscale by using optical and atomic spectroscopy techniques.

In January 2017, he joined Incize as Senior Research Scientist.

Khaled Aouadi, MSc

Khaled Aouadi received his Master’s degree in semiconductor components in 2003 From ENSERG-INPG, Grenoble, France and he graduated with MSc in Sciences and Materials Engineering in 2005 from University Joseph Fourier in Grenoble, FRANCE. From April 2004 to September 2004 he was intern at STMicrolectronics in Crolles, France. He worked at R&D Process Metal Team: Develop and Test Process for a New Low-resistivity Tungsten Film for Contact Metallization.

From October 2005 to March 2010 he worked as a Physical Design Kit Project Engineer at STMicrolectronics in Tunis, Tunisia. As Project Management and Quality Responsible, he was in charge of developing design kit and layout validation for a wide range of technologies (BiCMOS / HCMOS / SIGE / SOI) and ensuring final product quality. From April 2010 to July 2013 he worked as a research engineer at ICTEAM Institute in Louvain-la-Neuve, Belgium. He was in charge of design and process for a new silicon sensor for proton therapy beam monitoring. He was also in charge of characterization: On Wafers Electrical measurements and Test under proton beam. From August 2018 he worked as Freelance Electrical engineer.

In December 2019, he joined Incize as an RF Engineer.

Romain Tuyaerts, PhD

Romain Tuyaerts received his master degree in physical engineering, with an orientation in nanotechnologies. He continued with a PhD in materials science at UCLouvain, obtained in 2018, focused on the coupling between micro-structure, mechanical, optical, and electrical properties of transparent conductive oxides deposited by reactive sputtering.

His current research interests include micro-fabrication techniques, and the integration of porous silicon in various applications such as RF microelectronics.

In October 2020 he joined Incize as a senior engineer.

Clara Whyte Ferreira, PhD Student

Clara Whyte Ferreira received, in 2021, two diplomas in Chemical and Materials Engineering for the double degree program between Universidade de São Paulo (USP), Brazil, and Université catholique de Louvain (UCLouvain), Belgium. She received an M.Sc. degree from UCLouvain. 

Before her university studies, she followed a three years technical course in management, and entrepreneurship, receiving a diploma, in 2014, from the technical management school of SEBRAE/MG in Belo Horizonte, Brazil.

During her bachelor studies, she integrated the Junior enterprise from Escola Politécnica da USP for three years, where she became coordinator of the chemical engineering department.

Between 2018 and 2019, she conducted a research project at Universidade de São Paulo in catalysis using carbon nanotubes promoted with different metals. In the framework of this project, she spent four months in Germany, at Technische Universität München, to further develop the research.

At UCLouvain, in the framework of her master thesis, she studied the use of silicon membranes for biosensing applications. She was then granted the best master thesis presentation award from the alumni association of École polytechnique de Louvain.

In October 2021, she joined Incize as a Ph.D. student to study the use of nanostructured surfaces for mass spectrometry characterization of organic molecules, biomarkers, and other analytes.

Amin Rassekh, PhD

Amin Rassekh received his M.Sc. degree in electrical engineering-electronics (Micro-Nanoelectronic devices) from the Sharif University of Technology, Tehran, Iran, in 2015. He received his Ph.D. degree in electrical engineering-electronics (Solid-State Electronics) from the Device Simulation and Modeling Laboratory, University of Tehran, Tehran, Iran in 2020. During his Ph.D., he worked on modeling, simulation, and optimization of advanced MOSFET Devices. In the years 2019-2020, he joined as an exchange Ph.D. student at the Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland. During this time, he was working on the modeling of FETs in harsh environments at the Electron Device Modeling and Technology Laboratory (EDLAB) and then he joined the Nanoelectronic Devices Laboratory (NANOLAB) in the same institute focusing on modeling the different types of advanced CMOS devices for low power applications. From 2020 to 2022, he was doing collaborative research with EDLAB, focusing on the modeling of low-power CMOS devices and the modeling of CMOS-based quantum-dot spin qubits.

His current research interests include solid-state physics, characterization, simulation, and modeling of advanced semiconductor devices.

Dr. Rassekh has a US-Patent disclosing a method for communication at the speed of light over an on-chip interconnect. He is the author and co-author of several scientific papers in peer-reviewed journals and a reviewer for IEEE journals.

In November 2022, he joined Incize as a Senior Modeling Engineer.

Laurent Petitjean, MSc

Laurent Petitjean received his BSc in Applied Electronics in 2019 from the “Haute Ecole de Liège” in Liège, Belgium, and obtained his MSc in Electronics in 2023 from the “Haute Ecole de la Province de Liège” in Liège, Belgium.

From September 2019 to September 2020, he worked as a Test Product Engineering Technician at Teleste, focusing on the ongoing improvement of the Passive and Indoors product range.

In September 2023, he joined Incize as Junior Engineer.

Ruidong Qin, MSc