Electrical characterization
Our expertise, access to the state-of-the-art equipment and partnership with laboratories across Europe enable us to provide wide range of electrical characterization services for substrate producers, fabless and foundries. From material to device, including active and passive, Si and III-V, on-wafer and packaged, from DC to mm-wave frequencies, our characterization services are application specific and are tailored to customer’s request.
Radio frequency
Large signal
- Harmonics (single tone), intermodulation (dual tone) and power handling
- Input power up to 49 dBm
- Noise floor -170 dBm
Small signal
- S-parameters up to 130 GHz
- Low frequency from 5 Hz
- RF figures of merit
5G mm-wave
- Small- and large-signal
- Adapted calibration techniques
- Application specific
Temperature
- Cryogenic from -270°C (4 K)
- Hot chuck up to 225°C
Substrate characterization
Harmonics
Substrate FoM
Intermodulation
Crosstalk
Noise
RF thermal noise
- 1 – 50 GHz
- Down to 0.2 dB of NFmin
- Programmable microwave tuners
- Measurement of NFmin, Rn, Yopt and NF50
1/f flicker noise
- Frequency range from of 0.03 Hz to 40 MHz
- Noise measurement down to 0.67 nV/sqr(Hz) @ 10 kHz
- 25 impedance values ranging from 0 ohms to 100 MΩ
- Current/voltage/power range of up to 0.1 A/200 V/10 W, respectively
- Supported devices include BJTs, FETs, diodes, resistors and circuits (op-amps, comparators, etc.)
Random telegraph signal noise (RTS, RTN)
- Time domain representation of noise
- Current and voltage histograms
- Supported devices include BJTs, FETs, diodes, resistors and circuits (op-amps, comparators, etc.)
- 2.5 ns minimum time step
- Sampling size up to 16 million
Material characterization
Oxide-substrate charges
- Flatband capacitance and voltage
- Oxide thickness
- Effective & total bulk oxide charge
- Substrate doping concentration
Dielectric
- Permittivity
- Loss tangent
Four point probe
- Sheet resistance
- Bulk resistivity
Self-heating
Thermal resistance extraction for SOI MOSFETs and GaN HEMTs
- Pulsed measurements
- RF measurements
- Modelling
Materials and samples
Materials
Silicon: Bulk, SOI, Trap-Rich, Porous, SiC, SiGe ...
III-V: GaN, GaAs ...
Dielectric: Quartz, Fused Silica ...
Piezo: LiTaO3, LiNbO3, ZnO ...
2D: Graphene, hBN ...
Phase-changing: VO2, GeTe ...
Samples
Size: from a single die to 300 mm wafer
Shape: Piece of wafer or whole wafer