Cleanroom

Services

  • Metallization
  • Wet & dry etching
  • Photo & e-beam lithography
  • Laser & FIB
  • Sputtering & thermal deposition
  • PCD, PECVD, LPCVD & ALD
  • Back-end process & packaging
  • SEM, TEM, profilometry, nanoindentation
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Materials

  • Substrates: Si, III-V, porous, quartz, ...
  • Metals: Al, Ag, Au, Ti, Ni, Cr, Pd, ...
  • Dielectrics: Si3N4, SiO2, Al2O3, TiO2, HfO2, …
  • Polymers

Samples

  • Shape: from wafer to piece of wafer
  • Size: from die to 8 inches

Examples

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Removal of top layers

  • Active Si
  • Cap GaN & AlGaN
  • BOX

Test structure patterning

  • CPW line
  • Passive
  • Single or two metal layers

Passives on thick dielectric

  • Thickness 1 … 20 µm
  • Material: Pi, BCB …

Facilities

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Area: 1000 m²

Class: < 10 particles of100 nm/feet³ of air

Equipment: 50 state-of-the-art

Tools: surface-patterning, thin films deposition and etching &  back-end processes

Activities: SOI-CMOS, thin film characterization, co-integration, photovoltaic, MEMS-NEMS, sensors, bio-technologies, porous Si, organic electronics & nano-electronics