Cleanroom
Services
- Metallization
- Wet & dry etching
- Photo & e-beam lithography
- Laser & FIB
- Sputtering & thermal deposition
- PCD, PECVD, LPCVD & ALD
- Back-end process & packaging
- SEM, TEM, profilometry, nanoindentation

Materials
- Substrates: Si, III-V, porous, quartz, ...
- Metals: Al, Ag, Au, Ti, Ni, Cr, Pd, ...
- Dielectrics: Si3N4, SiO2, Al2O3, TiO2, HfO2, …
- Polymers
Samples
- Shape: from wafer to piece of wafer
- Size: from die to 8 inches
Examples



Removal of top layers
- Active Si
- Cap GaN & AlGaN
- BOX
Test structure patterning
- CPW line
- Passive
- Single or two metal layers
Passives on thick dielectric
- Thickness 1 … 20 µm
- Material: Pi, BCB …
Facilities

Area: 1000 m²
Class: < 10 particles of100 nm/feet³ of air
Equipment: 50 state-of-the-art
Tools: surface-patterning, thin films deposition and etching & back-end processes
Activities: SOI-CMOS, thin film characterization, co-integration, photovoltaic, MEMS-NEMS, sensors, bio-technologies, porous Si, organic electronics & nano-electronics